TRANSISTOR 2SD1047 NPN
متوفر
High power NPN epitaxial planar bipolar transistorFeaturesHigh breakdown voltage VCEO 140 V Typical = 20 MHz Fully characterized 125 oCApplicationDescription The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Order code 2SD1047 Marking 2SD1047 Package TO-3P Packaging TubeSymbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation 25 °C Storage temperature Max. operating junction temperature Value to 150 Unit °C Parameter Thermal resistance junction-case ____max Value 1.25 Unit °C/W Parameter Collector cut-o
High power NPN epitaxial planar bipolar transistorFeaturesHigh breakdown voltage VCEO 140 V Typical = 20 MHz Fully characterized 125 oCApplicationDescription The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Order code 2SD1047 Marking 2SD1047 Package TO-3P Packaging TubeSymbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation 25 °C Storage temperature Max. operating junction temperature Value to 150 Unit °C Parameter Thermal resistance junction-case ____max Value 1.25 Unit °C/W Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB 200 V VEB 5 A VCE 5 V VCE 4 V VCE = 12 MHz pF Min. Typ. Max. 0.1 Unit µA